r07ds1307ej0100 rev.1.00 page 1 of 7 nov 02, 2015 preliminary datasheet rjp65t54dpm-e0 650v - 30a - igbt application: partial switching circuit features ? low collector to emitter saturation voltage v ce(sat) = 1.35 v typ. (at i c = 30 a, v ge = 15 v, ta = 25c) ? isolated package ? trench gate and thin wafer technology (g7h series) ? high speed switching ? operation frequency (50hz f ? 20khz) outline 1 2 3 renesas package code: prss0003zd-a (package name: to-3pf) 1. gate 2. collecto r 3. emitter c g e absolute maximum ratings (tc = 25c) item symbol ratings unit collector to emitter voltage v ces 650 v gate to emitter voltage v ges ? 30 v collector current tc = 25 c i c 60 a tc = 100 c i c 30 a collector peak current i c (peak) note1 225 a collector dissipation p c 55.5 w junction to case thermal impedance ? j-c 2.7 c/w junction temperature tj note2 175 c storage temperature tstg ?55 to +150 c notes: 1. pw ? 10 s, duty cycle ? 1% 2. please use this device in the thermal conditions which the junction temperature does not exceed 175c. renesas igbt application note is disclosed about re liability test and application condition up to 175c. r07ds1307ej0100 rev.1.00 nov 02, 2015
rjp65t54dpm-e0 preliminary r07ds1307ej0100 rev.1.00 page 2 of 7 nov 02, 2015 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions zero gate voltage collector current i ces ? ? 1 ? a v ce = 650 v, v ge = 0 gate to emitter leak current i ges ? ? 1 ? a v ge = 30 v, v ce = 0 gate to emitter cutoff voltage v ge(off) 5 ? 7 v v ce = 10v, i c = 1.0 ma collector to emitter saturation voltage v ce(sat) ? 1.35 1.68 v i c = 30 a, v ge = 15v note3 total gate charge qg 72 nc v ce = 400 v v ge = 15v ic= 30a gate to emitter charge qge 10 nc gate to collector charge qgc 30 nc input capacitance cies ? 1500 ? pf v ce = 25 v v ge = 0 f = 1 mhz output capacitance coes ? 42 ? pf reveres transfer capacitance cres ? 30 ? pf turn-on delay time t d(on) ? 35 ? ns v cc = 400 v v ge = 15 v, i c = 30 a rg = 10 ??? t c = 25 c ? inductive load note4 rise time t r ? 20 ? ns turn-off delay time t d(off) ? 105 ? ns fall time t f ? 125 ? ns turn-on loss energy e on ? 0.33 ? mj turn-off loss energy e off ? 0.68 ? mj turn-on delay time t d(on) ? 33 ? ns v cc = 400 v v ge = 15 v, i c = 30 a rg = 10 ??? t c = 150c ? inductive load note4 rise time t r ? 23 ? ns turn-off delay time t d(off) ? 110 ? ns fall time t f ? 155 ? ns turn-on loss energy e on ? 0.48 ? mj turn-off loss energy e off ? 0.96 ? mj notes: 3. pulse test 4. switching time test circuit and waveform are shown below. not guarantee short circuit withstand time
rjp65t54dpm-e0 preliminary r07ds1307ej0100 rev.1.00 page 3 of 7 nov 02, 2015 main characteristics typical transfer characteristics collector current i c (a) gate to emitter voltage v ge (v) 0 0 4 8 12 20 16 v ce = 10 v pulse test 90 60 30 typical output characteristics 90 60 30 46810 collector current i c (a) 0 0 collector to emitter voltage v ce (v) pulse test tc = 2 5 c v ge = 7.0 v 9.0 v 15 v 11 v collector current i c (a) collector to emitter voltage v ce (v) maximum safe operation area 1000 100 1 10 0.01 0.1 1 100 10 1000 typical output characteristics collector current i c (a) collector to emitter voltage v ce (v) 60 40 20 0 collector current i c (a) case temperature tc (c) maximum dc collector current vs. case temperature 70 60 40 30 20 10 0 0 25 50 100 75 125 150 175 0 25 50 100 75 125 150 175 collector dissipation pc (w) case temperature tc (c) collector dissipation vs. case temperature 50 90 60 30 2 246810 0 0 pulse test tc = 150 c tc = 25 c single pulse pw = 10 s 100 s 150 c tc = 2 5 c v ge = 7.0 v 8.0 v 9.0 v 10 v 15 v 11 v 10 v 8.0 v
rjp65t54dpm-e0 preliminary r07ds1307ej0100 rev.1.00 page 4 of 7 nov 02, 2015 gate charge qg (nc) dynamic input characteristics (typical) 800 600 400 200 0 0 16 12 8 4 0 20 40 60 80 100 v ge v ce collector to emitter voltage v ce (v) gate to emitter voltage v ge (v) v cc = 400 v i c = 30 a tc = 25 c capacitance c (pf) 1 10 100 1000 10000 0 100 50 150 200 250 300 typical capacitance vs. collector to emitter voltage collector to emitter voltage v ce (v) 10 8 6 4 2 0 gate to emitter cutoff voltage vs. case temparature (typical) ? 25 0 25 75 125 50 100 150 gate to emitter cutoff voltage v ge(off) (v) v ce = 10 v pulse test case temparature tc (c) 1 ma i c = 10 ma collector to emitter saturation voltage vs. gate to emitter voltage (typical) collector to emitter saturation voltage v ce(sat) (v) gate to emitter voltage v ge (v) collector to emitter saturation voltage vs. gate to emitter voltage (typical) collector to emitter saturation voltage v ce(sat) (v) gate to emitter voltage v ge (v) 3 2 1 2.5 1.5 0.5 0 ? 25 0 25 75 125 50 100 150 30 a 15 a i c = 60 a v ge = 15 v pulse test collector to emitter saturation voltage vs. case temparature (typical) collector to emitter saturation voltage v ce(sat) (v) case temparature tc ( c) 5 4 3 2 0 4 8 12 20 16 1 5 4 3 2 0 4812 20 16 1 tc = 150 c pulse test tc = 2 5 c pulse test i c = 60 a 30 a 15 a v ge = 0 v f = 1 mhz tc = 25 c cies coes cres i c = 60 a 30 a 15 a
rjp65t54dpm-e0 preliminary r07ds1307ej0100 rev.1.00 page 5 of 7 nov 02, 2015 1 10 100 1 10 0.1 100 1000 10 switching characteristics (typical) (3) gate registance rg ( ) (inductive load) switching characteristics (typical) (4) gate registance rg ( ) (inductive load) eoff eon v cc = 400 v, v ge = 15 v i c = 30 a, tc = 150 c swithing energy losses e (mj) switching times t (ns) 1 10 100 0.1 1 10 swithing energy losses e (mj) 1 10 100 1 10 100 collector current i c (a) (inductive load) eoff eon 1 100 10 1000 switching characteristics (typical) (1) switching characteristics (typical) (2) collector current i c (a) (inductive load) switching times t (ns) v cc = 400 v, v ge = 15 v i c = 30 a, tc = 150 c t d(off) t r t f t d(on) 10 100 1000 50 0 25 150 75 125 100 switching characteristics (typical) (5) t d(on) case temperature tc (c) (inductive load) switching times t (ns) v cc = 400 v, v ge = 15 v i c = 30 a, rg = 10 t f t d(off) t r 0.1 1 10 50 25 0 150 75 125 100 case temperature tc (c) (inductive load) switching characteristics (typical) (6) eoff eon swithing energy losses e (mj) v cc = 400 v, v ge = 15 v i c = 30 a, rg = 10 v cc = 400 v, v ge = 15 v rg = 10 , tc = 150 c v cc = 400 v, v ge = 15 v rg = 10 , tc = 150 c t d(off) t d(on) t r t f
rjp65t54dpm-e0 preliminary r07ds1307ej0100 rev.1.00 page 6 of 7 nov 02, 2015 0.01 1 0.1 10 10 100 1 m 10 m 100 m 1 100 10 0.05 0.2 0.1 0.5 d = 1 tc = 25 c 0.01 0.02 1 shot pulse pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width p dm pw t d = pw t j ? c(t) = s (t) ? j ? c j ? c = 2.7 c/w, tc = 25 c switching time test circuit diode clamp d.u.t rg l v cc waveform t d(off) t d(on) t f t r 90% 90% 90% 10% 10% 10% v ge i c
rjp65t54dpm-e0 preliminary r07ds1307ej0100 rev.1.00 page 7 of 7 nov 02, 2015 package dimensions unit: mm 15.5 0.2 5.5 0.2 3.0 0.2 4.5 0.2 24.5 0.2 26.5 0.2 23.0 0.2 10.0 0.2 43.8 0.2 14.8 0.2 4.0 0.2 2.0 0.2 5.45 typ. 5.45 typ. 2.0 0.2 2.0 0.2 3.3 0.2 0.75 0.9 +0.2 ? 0.1 +0.2 ? 0.1 ? 3.6 0.2 previous c od e pr ss0003 zd- a t o - 3 pf s t o - 3 p f mass[t y p. ] 5 .5 g rene s a s c od e j eita packa g e cod e packa g e nam e ordering information orderable part number quan tity shipping container rjp65t54dpm-e0#t2 360 pcs box (tube)
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